摘要
本文报道了SOI(Semiconductor On Insulator)材料的场助键合技术,其中包括Si/SiO_2-SiO_2/Si,Si-石英,GaAs-玻璃等的键合。利用各种检测手段对键合材料的键合面积、键合强度、界面形貌及电学特性进行了测试。文中还讨论了场助键合机理、等离子体表面处理方法及场助键合材料的应用实例。
The technology of field assisted bonding for SOI materials includ-ing Si/SiO^2-SiO^2/Si, Si-SiO^2/Si, Si-quartz and GaAs-glass is introduced in this paper. The bonding area, bonding strength, pattern of bonding cross-sections and electrical performances were detected by various test methods.The mechanism of field-assisted bonding was explored. The surface treat-ment of materials for bonding by plasma is introduced. And an example of SOI material by field-assisted bonding is given.
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
1991年第5期9-15,共7页
Journal of Southeast University：Natural Science Edition
基金
国家自然科学基金
关键词
SOI材料
场助键合
表面处理
plasma
surface treatment / field-assisted bonding
SOI material
