摘要
本文介绍了MOS型硅功率器件在平面工艺条件下常用的电场限制环以及场板终端结构的基本设计理论和设计方法,讨论了这两种结构的优化设计的一般原则。在此基础上探讨了平面工艺p-n结终端技术发展所面临的课题。
Basic theories and techniques for designing field limiting rings and field plate termination structures commonly used in planar process for Si MOS power devices are presented in the paper. General principles for optimal design of the two structures are discussed. Problems confronted in developing planar termination techniques are investigated.
出处
《微电子学》
CAS
CSCD
1992年第2期37-44,共8页
Microelectronics
关键词
硅功率器件
MOS器件
终端结构
Si power device, MOS device, Planar process, Field limiting ring, Termination stucture, Field plate
