摘要
以硅烷和氨气分别做为硅源和氮源,以高纯氮气为载气,采用热壁式管式反应炉,通过低压化学气相沉积(low pressure chemical vapor deposition,LPCVD)技术制备了氮化硅薄膜(SiN_x)。借助椭圆偏振仪研究了SiN_x薄膜的生长动力学,通过Fourier红外光谱和X光电子能谱表征了SiN_x薄膜的性质,并利用原子力显微镜观察了SiN_x薄膜的微观形貌。在其它工艺条件相同的情况下,SiN_x薄膜的生长速率随着工作压力的增大单调增加,原料气中氨气与硅烷的流量之比(R)对薄膜的生长速率有相反的影响。随着反应温度的升高,沉积速率逐渐增加,在840℃附近达到最大,随后迅速降低。当R<2时获得富Si的SiN_x薄膜(x<1.33);当R>4时获得近化学计量(z≈1.33)的SiN_x薄膜。
Silicon nitride films (SiNx) were grown on silicon wafer from SiH4- NH3- N2 system via low pressure chemical va-por deposition (LPCVD) at temperatures ranging from 770℃ to 840℃ in hot-wall horizontal tubular reactor. The growth ki-netics and chemical compositions of the films were investigated with the variation of deposition parameters, including total pressure, substrate temperature and source gas ratio, by spectroscopic ellipsometer, X-ray photoelectron spectroscopy (XPS) and Fourier transformed infrared spectroscopy (FTIR). The growth rate of the films increases with increasing total pressure and decreasing with the flow ratio of NH3 to SiH4 (J?). As substrate temperature increases, growth rate linearly increases at lower temperature and then promptly decreases at higher temperature. The FTIR result reveals that Si-N bond substantial formed in the films, due to its characteristic adsorption presented at 837 cm-1only. The XPS analysis shows that the films are Si-rich SiNx (x<1. 33) at R<2 and near stoichiometric SiNx (x≈1. 33) at R>4.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2003年第10期986-990,共5页
Journal of The Chinese Ceramic Society
基金
上海市科技发展基金(00JC14015)
关键词
氮化硅薄膜
生长动力学
性质
工艺
silicon nitride films
growth kinetics
properties
processing
