摘要
采用改进的溶胶 凝胶方法 ,在Pt/Ti/SiO2 /Si基片上成功地制备出不同组分 ,具有钙钛矿型结构的BST铁电薄膜。BST5、BST10和BST15铁电薄膜的介电系数εr 分别为 375、4 0 0和4 2 5,介电损耗tgδ分别为 0 .0 4 1、0 .0 2 4和 0 .0 10 ,剩余极化强度Pr 分别为 2 μc/cm2 、2 .5μc/cm2 和1.7μc/cm2 ,矫顽场Ec 分别为 4 0kV/cm、50kV/cm和 35kV/cm ,是制备非制冷红外焦平面阵列的优选材料。
BST ferroelectric thin films with perovskite structure on Pt/Ti/SiO-2/Si substrate have been fabricated by improved sol-gel processing. The dielectric constant ε-r and dielectric loss tgδ of BST5, BST10, BST15 were 375, 400, 425 and 0.041, 0.024, 0.010, respectively. Their remanent polarization P r and coercive field E c were 2μc/cm+2, 2.5μc/cm+2, 1.7μc/cm+2 and 40kV/cm, 50kV/cm, 35kV/cm, respectively. BST ferroelectric thin film is a kind of excellent material for uncooled infrared focal plane array.
出处
《红外与激光工程》
EI
CSCD
北大核心
2001年第3期222-225,共4页
Infrared and Laser Engineering
基金
"八六三"计划新材料领域资助项目 (863 71 5 0 0 2 0 1 0 0 )
关键词
BST铁电薄膜
非制冷红外焦平面阵列
介电特性
铁电特性
溶胶-凝胶
BST ferroelectric thin films
Uncooled infrared focal plane arrays
Dielectric properties
Ferroelectric properties
Sol-gel
