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退火温度对铁电薄膜钛酸锶钡的影响 被引量:3

EFFECT OF ANNEALING TEMPERATURE ON FERROELECTRIC BARIUM STRONTIUM TITANATE THIN FILMS
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摘要 用醋酸盐和钛酸酯为原料,采用Sol-Gel工艺在Pt/TiO2/SiO2/Si基片上制备出Ba0.5Sr0.5TiO(3BST)铁电薄膜,然后在650-800℃下对BST薄膜进行退火,研究退火温度对钛酸锶钡铁电薄膜的影响。X射线衍射分析表明:退火温度在750℃以上时,BST薄膜转变成较为完整的ABO3型钙钛矿结构;SEM分析表明:750℃热处理的薄膜颗粒较大,且颗粒生长较好;阻抗分析仪测试表明:750℃退火处理的薄膜介电性能最佳;TEM分析表明:750℃晶粒发育完善、清晰,晶粒与晶粒之间比较紧密,且存在微畴区域。 Barium strontium titanate films with higher properties have been obtained by sol-gel processing on Pt/TiO2/SiO2/Si substrate using barium acetate, strontium acetate and titanium-tetrabutoxide as starting materials. X-rays diffraction revealed that at 750℃ the BST films had crystallized into ABO3 perovskite phase. Analysis indicated that large, uniform grains, and the best dielectric properties were obtained at 750℃. Analysis by TEM revealed that grains were crystallized better, close to each other, and micro-domains were detected at 750℃.
出处 《陶瓷学报》 CAS 2006年第1期92-96,共5页 Journal of Ceramics
关键词 BST 退火 X射线衍射 介频谱 BST, annealing, X-ray diffraction, dielectric constant-frequency
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