摘要
采用射频磁控溅射法制备了用于非致冷红外焦平面阵列的 ( Ba0 .7Sr0 .3) Ti O3( BST)铁电薄膜。研究了BST铁电薄膜的制备工艺 ,分析了 BST铁电薄膜的晶体结构和微观形貌。测试了其介电特性 ,测得的相对介电常数 -温度曲线表明制备的 ( Ba0 .7Sr0 .3) Ti O3铁电薄膜的居里温度在室温附近 ,约 3 0°C处。
The (Ba 07 Sr 03 )TiO 3 ferroelectric thin film for uncooled infrared focal plane array prepared by radio-frequency magnetron sputtering has been investigated focusing on the condition of fabrication of electrode and BST thin filmPermittivity-temperature properties of the BST ferroelectric thin film have been measured with impedance analyzerAccording to the permittivity-temperature curve,the Curie temperature of the BST ferroelectric thin film is about 30 °C,around room temperature
出处
《压电与声光》
CAS
CSCD
北大核心
2001年第4期293-295,共3页
Piezoelectrics & Acoustooptics
基金
国防科技电子预研基金资助项目 ( 99J2 .2 .4JW.0 5 12 )
关键词
射频磁控溅射法
BST铁电薄膜
红外焦平面阵列
RF magnetron sputtering
BST ferroelectric thin film
comparative permittivity-temperature curve
Curie temperature
