摘要
采用 ICP- 98型高密度等离子体刻蚀机进行了厚 Si O2 陡直刻蚀技术的研究 ,利用双层掩膜技术解决了“微掩膜现象”问题 ,刻蚀获得 12 .4 μm的陡直 Si O2 光波导剖面 ,并将这一刻蚀技术用于阵列波导光栅的制作中 .
Aarrayed waveguide grating(AWG) multiplexer is the key device among all the demulti/multiplexer.The difficulty in an AWG fabrication is deep vertical SiO 2 etching.Using ICP 98 high density plasma etcher,a deep vertical SiO 2 etching technology is demonstrated and is used to etch an AWG.The micro mask phenomenon is solved by using double mask technology.
