摘要
采用射频磁控溅射工艺、以氧化锌铝陶瓷靶为靶材制备透明导电ZAO薄膜 ,系统研究了各工艺参数 ,如工作气压、温度、射频功率和退火条件对其结构和光电特性的影响。在纯氩气中且补底温度为 30 0℃时制备的ZAO薄膜经热处理后电阻率降至 8 7× 1 0 -4Ωcm ,可见光透过率在 85 %以上。X射线衍射谱扫描电镜照片表明ZAO晶粒具有六角纤锌矿结构且呈c轴择优取向 ,晶粒垂直于衬底方向柱状生长。
The transparent conductive ZAO films were depostited on glass substrate by RF magnetron sputtering using the ceramic target mixed ZnO with Al 2O 3.The effects of the technical parameters,such as argon pressure,substrate temperature,RF power and annealing treatment,on the structural and photoelectric property of ZAO thin films were systematically investigated.The post-annealed ZAO films prepared in pure argon at the substrate temperature of 350℃ showed the visible transmittance above 85% and the minimum specific resistance reduced to 8.7×10 -4 Ωcm.The measurement of XRD and SEM showed that the ZAO grains were of hexagonal crystal structure and preferred orientation of c axis,which columnarly grew perpendicular to the substrate surface.
出处
《上海金属》
CAS
2003年第5期16-20,共5页
Shanghai Metals
