摘要
采用射频反应溅射工艺沉积了αSiC∶H薄膜。利用微分扫描量热器 (DSC)和差热分析仪 (DTA)两种热分析方法确定了αSiC∶H薄膜的脱H过程和相转变温度 ,35 3.2℃脱Si—H和 60 2 .6℃脱C—H ,并在 10 80℃相变结晶。在氮气流保护下的光热炉内进行热处理 ,Fourier红外光谱 (FTIR)和反射谱的研究表明 :40 0℃热处理后薄膜内的H含量急剧下降。高温热处理中的脱H过程有利于游离硅和游离碳的反应形成额外的Si—C键 ,促进薄膜致密 ,并能提高其在紫外部分的反射率 ,降低红外区域的反射率。热处理温度超过 5 0 0℃ ,容易导致薄膜脱落。
SiC∶H thin films were synthesized by reactive rf-sputtering at the accelerating voltage of Ar + ions of 1.6 kV in the mixture of V(CH 4)∶V(Ar)=1∶5. The thermal analyses of DSC and DTA determine the dehydrogenation and phase transformation temperatures: de-bonding of Si-H at 353.2 ℃, de-bonding of C-H at 602.6 ℃, and the phase transformation from amorphous to crystalline at 1 080 ℃. Thermal annealing of αSiC∶H were conducted in KG2ZE photothermic furnace and the samples were characterized by FTIR and reflection spectra. The results indicate that the hydrogen content decreases sharply after annealing at 400 ℃. The dehydrogenation process during deposition can enhance the reaction between free carbon and free silicon to form additional Si-C bonds, which results in the densification of thin films. Furthermore, the reflection in the ultraviolet region increases, while the reflection in the near-infrared region decreases. However when the annealing temperature is over 500 ℃, it is easy to damage the thin films. In summary, appropriate thermal annealing process for αSiC∶H thin films is helpful for developing their space applications.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2003年第7期654-658,共5页
Journal of The Chinese Ceramic Society
关键词
碳化硅
氢
热处理
热分析
光学性能
silicon carbide
hydrogen
thermal annealing
thermal analysis
optical properties
