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Zn∶In∶LiNbO_3晶体抗光损伤性能的研究

Study on Photodamage Resistance Ability of LiNbO_3 Crystals Co-doped with Zn and In Ions
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摘要 在LiNbO3 中掺进ZnO和In2 O3 以Czochralski技术生长Zn∶In∶LiNbO3 晶体。采用光斑畸变法测试Zn∶In∶LiNbO3晶体抗光损伤能力。Zn∶In∶LiNbO3 晶体抗光损伤能力比LiNbO3 晶体提高二个数量级。测试晶体的红外光谱 ,Zn∶In∶LiNbO3 晶体吸收峰的位置相对LiNbO3 晶体发生紫移 ,且随着Zn2 + 和In3 + 浓度增加紫移程度增加。晶体的倍频性能(相位匹配温度和倍频转换效率 )研究表明 :Zn∶In∶LiNbO3 晶体相位匹配温度在室温附近。并研究了Zn∶In∶LiNbO3晶体抗光损伤机理和OH-吸收峰紫移的机理。 Doping ZnO and In 2O 3 into LiNbO 3,Zn∶In∶LiNbO 3 crystals were grown by Czochralski method.The photodamage resistance ability of the crystals was measured by facula distortion method.It was shown that the photodamage resistance ability of Zn∶In∶LN crystals is two orders of magnitude higher than that of pure LN crystal.The infrared spectra of the crystals were measured.The result showed that the situation of OH - absorption peak with Zn∶In∶LiNbO 3 crystal is shifted to UV edge compared with LiNbO 3 crystal and the shift degree to UV edge is improved with the concentration of Zn 2+ and In 3+ ions increased.The second harmonic generation (SHG) properties(phase matching temperature and double frequency converting efficiency) of Zn∶In∶LN crystals were investigated.It was shown that the phase matching temperature of the crystal is near room temperature.The enhancement mechanism of the photodamage resistance ability of Zn∶In∶LiNbO 3 and the shift to UV edge of OH - absorption peak was also studied.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2003年第3期247-251,共5页 Journal of Synthetic Crystals
基金 国家 8 63项目 ( 863 2 0 0 1AA3 13 0 4) 973项目 ( 973G19990 3 3 0 ) 黑龙江省科学基金 (A0 1- 0 3 )资助
关键词 Zn:In:LiNbO3晶体 抗光损伤性能 倍频性能 光斑畸变法 Zn∶In∶LiNbO3 crystals photodamage resistance ability second harmonic generation properties
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参考文献4

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