摘要
对单异质结界面系统,引入有限高势垒与考虑导带弯曲的真实势,利用变分法讨论磁场对界面附近束缚于施主杂质的单电子基态能量的影响.对磁场中的AlxGa1-xAs/GaAs异质结系统的杂质态结合能作了数值计算,给出结合能随Al组合分、电子面密度和杂质位置的变化关系.结果表明:杂质态结合能随磁场强度的增大而显著增大.
A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterojunction.The influence of finite potential barrier and energy band bending in the presence of an external magnetic field has been considered.The impurity state binding energy is obtained numerically for the AlxGa1-xAs/GaAs system.The relations between the ground state binding energy and the magnetic field strength,the Al composition,the electron area density and the impurity position are given respectively.The result shows that the impurity state binding energy increases obviously as the increase of the magnetic field intensity .
出处
《内蒙古大学学报（自然科学版）》
CAS
CSCD
北大核心
2003年第4期395-401,共7页
Journal of Inner Mongolia University：Natural Science Edition
基金
国家自然科学基金资助项目(60166002)
关键词
异质结
磁场
施主
结合能
heterojunction
magnetic field
donor
binding energy
