摘要
ＡｌｘＧａ１－ｘＡｓ／ＧａＡｓ合金型异质结价带偏移的研究中，采用以平均键能为参考能级的ΔＥｖ理论计算方法，得到ΔＥｖ（ｘ）＝０．５３１ｘ＋０．００１ｘ２的理论计算结果．该计算结果与目前的一些实验结果符合较好．
Abstract An average-bond-energy method for determining valence-band offsets (ΔEv(x) )at AlxGa1-xAs/GaAs interfaces is suggested.Based on the method, we find that the variations of valence-band offsets ΔEv(x) with composition x of AlxGa1-xAs/GaAs (ΔEv(x)= 0.531x-0. 001x2)are in good agreement with experimental results.
基金
国家和福建省自然科学基金
