摘要
当器件尺寸进入深亚微米后,SOIMOS集成电路中的N沟和P沟器件的热载流子效应引起的器件退化已不能忽视。通过分别测量这两种器件的跨导、阈值电压等参数的退化与应力条件的关系,分析了这两种器件的退化规律,对这两种器件的热载流子退化机制提出了合理的解释。并模拟了在最坏应力条件下,最大线性区跨导Gmmax退化与漏偏压应力Vd的关系,说明不同沟长的器件在它们的最大漏偏压以下时,能使Gmmax的退化小于10%。
Hotcarrier effects in deep submicron N and Pchannel SOI MOSFET's are investigated for gate length ranging from 05 μm down to 01 μm The hotcarrier induced device degradations are analyzed, including the variations of the maximum transconductance, Gmmax, under different stress conditions A theoretical analysis on the degradation characteristics of both N and Pchannel SOI MOSFET's is made for different voltage stresses In the worst case, the 01 μm NMOS/SOI device can operate for 10 years with a bias up to 15 V
出处
《微电子学》
CAS
CSCD
北大核心
2003年第2期90-93,共4页
Microelectronics
基金
浙江工业大学基金(X32010)
