摘要
通过测量深亚微米器件的跨导、阈值电压等参数的退化与应力条件的关系 ,分析SOIPMOS器件尺寸进入深亚微米后的热载流子效应引起的退化规律。模拟了在最坏应力条件下 ,最大线性区跨导 Gm max 退化与漏偏压应力 Vd的关系 ,以及器件寿命与应力 Vd
This paper analyses the failure mechanism and physical model of hot\|carrier effects. We have completed the experimental tests on the variations of the maximum transconductance Gmmax and the threshold voltage Vth under different stress conditions. A detailed theoretical analysis on the degradation charactaristics of SOIPMOSFET is presented for different voltage stresses.In the worst case,the 0.2μm SOIPMOSFETs can operate for 10 years with a bias up to 3V.
出处
《浙江工业大学学报》
CAS
2003年第4期410-413,418,共5页
Journal of Zhejiang University of Technology
