摘要
通过分析国外流行的一种 Bi CMOS集成施密特触发门 ,提出了一种高速、低功耗、全摆幅输出的Bi CMOS施密特触发器。该器件中单、双极型电路优势互补 ,电源电压为 1 .5 V,实现了优于同类产品的全摆幅输出 ,且其开关速度高于同类 CMOS产品的 1 3倍以上 。
A novel high speed, low power consumption and full swing BiCMOS Schmitt trigger, consisting of a BiCMOS inverter, a CMOS latch circuit and a feedback network, is proposed after the same BiCMOS one is analyzed. Although the power consumption of this proposed 1.5 V device is slightly more than that of the CMOS counterpart, this one is a full swing design and its speed even reaches 13 times of that of the CMOS trigger. With these characteristics, this device is very suitable for high speed, low supply voltage and low power consumption applications.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2003年第2期210-213,235,共5页
Research & Progress of SSE
基金
江苏省高校自然科学研究基金项目 ( 0 2 KJB5 10 0 0 5 )
