摘要
等离子体基注渗技术在材料表面改性中具有极为重要的应用,本文报道了一种实现恒温条件的N等离子体基注渗的工艺方法,利用该方法可以根据工艺研究需要,实现注渗剂量、注渗能量(加速电压)和注渗温度单一参数调节,为等离子体体基注渗工艺的优化提供了一种切实可行的研究方法。利用本文提出的工艺方法,对纯铁进行了各种温度下的N离子注渗。结果表明,处理过程中,可依据工艺设计,单参数大范围改变注渗电压或注渗恒温温度,温度波动很小,离子注入层厚度得到明显提高。
Plasma base ion implantation (PBII) at elevated temperature is a very important technology for the surface modification of materials. A technology for PBII at constant temperature is presented. The single implantation parameter such as implantation dose, implantation voltage and temperature can be changed conveniently using the technology, which provide a doable technology for the optimization of ion implantation. N ion implantation into αFe is carried out using the technology at various temperatures, and the results indicate that the temperature or voltage can be changed singly in larger range on the bases of designed technology during ion implantation. The fluctuation of temperature is very small, and the nitride layer thickness can be increased greatly.
出处
《真空》
CAS
北大核心
2003年第3期33-37,共5页
Vacuum
