期刊文献+

掺杂Fe^(3+)对钛酸锶氧敏薄膜电阻的影响

The effects of Fe^(3+)doping on resistance of SrTiO_3 films as oxygen sensors
在线阅读 下载PDF
导出
摘要 利用溶胶—凝胶的方法制备钛酸锶氧敏薄膜 ,掺杂不同含量的铁离子 ,测试在不同氧分压、温度下薄膜的电阻。所得到的结果和镁离子的掺杂一样 ,可以改善阻温特性 ,降低薄膜电阻。铁离子的摩尔分数在 2 0 %~ 2 5 %之间时 ,薄膜电阻在一定的温度区间内降低 ,表现出较好的氧敏特性 ,在该区间内阻温特性很好 。 The SrTiO 3 film as oxygen sensors were prepared by sol gel process.The Fe 3+ doped in SrTiO 3 films in molar content were taken as 10%,15%,20%,25% and 30%,respectively.All samples were measured under the temperature of 600~900℃, and the O 2 pressures were less than 2.5×10 4 Pa.The results show that the film exhibit P type semiconductivity. It was found that when the Fe 3+ was 20% to 25% in molar content, the resistance of SrTiO 3 decreased indenpendent on the temperature change in the range of 600~900℃, exhibiting oxygen sensitive properties. The results can be explained according to the defect chemistry equations.
作者 杨莉 郭森
出处 《山东建筑工程学院学报》 2003年第1期78-81,共4页 Journal of Shandong Institute of Architecture and Engineering
关键词 钛酸锶薄膜 铁掺杂 氧敏材料 电阻 SrTiO 3 film Fe doping oxygen sensors electrical resistance
  • 相关文献

参考文献2

二级参考文献3

  • 1Zhou X H,Sensors Actuators B,1997年,41卷,177页
  • 2Yu C,Chem Lett,1986年,563页
  • 3Chan N N,J Electrochem Soc,1981年,128卷,8期,1762页

共引文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部