摘要
本文着重讨论了掺镁SrTiO3陶瓷的电导与温度和环境氧分压之间的关系．在SrTiO3中镁的含量分别选为10、20、30、40和50mol％，所有样品均在20～900℃的温度区间和3．8×10－4～2．6×10－1atm的氧分压范围被测试．结果表明，所有样品均呈现p型半导体的导电特征，样品在不同温度下的关系中的m与镁的含量和温度有关．根据X光衍射图和缺陷化学理论，实验结果得到适当的解释．
The dependence of the electrical conduction of Mg-doped SrTiO3 ceramics on the temperature and the oxygen partial pressure was discussed. The Mg contents in SrTiO3 were taken as 10mol%(sample 1), 20mol%(sample 2), 3Omol%(sample 3), 40mol%(sample 4) and 50mol%(sample 5), respectively. All samples were measured in the temperature range 20~900℃ and PO2 region from 3.8×10-4 to 1.2 × 10-1 atm. The results show that all samples exhibit p-type semiconduction.The factor m from R ∝ is dependent on temperature and Mg content in SrTiO3. The obtained results can be appropriately explained according to the X-ray diffraction patterns and the theory of defect chemistry.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第6期927-932,共6页
Journal of Inorganic Materials
基金
国家科委资助
丹麦DANIDA基金
丹麦Risφ国家实验室资助
关键词
钛酸锶陶瓷
缺陷
电导率
陶瓷
掺镁
SrTiO_3 ceramic, defect chemistry, nonstoichiometry, electrical conductivity
