摘要
Abstract： The effects of low temperature annealing, such as post high-k dielectric deposition annealing （PDA）, post metal annealing （PMA） and forming gas annealing （FGA） on the electrical characteristics of a metal-oxidesemiconductor （MOS） capacitor with a TiN metal gate and a Hf02 dielectric are systematically investigated. It can be found that the low temperature annealing can improve the capacitance-voltage hysteresis performance signifi- cantly at the cost of increasing gate leakage current. Moreover, FGA could effectively decrease the interfacial state density and oxygen vacancy density, and PDA could make the flat band positively shift which is suitable for P-type MOSs. Key words： ALD Hf02; TiN; low temperature annealing; hysteresis
Abstract： The effects of low temperature annealing, such as post high-k dielectric deposition annealing （PDA）, post metal annealing （PMA） and forming gas annealing （FGA） on the electrical characteristics of a metal-oxidesemiconductor （MOS） capacitor with a TiN metal gate and a Hf02 dielectric are systematically investigated. It can be found that the low temperature annealing can improve the capacitance-voltage hysteresis performance signifi- cantly at the cost of increasing gate leakage current. Moreover, FGA could effectively decrease the interfacial state density and oxygen vacancy density, and PDA could make the flat band positively shift which is suitable for P-type MOSs. Key words： ALD Hf02; TiN; low temperature annealing; hysteresis
基金
supported by the Important National Science&Technology Specific Projects,China(No.2009ZX02035)
the National Natural Science Foundation of China(Nos.61176091,50932001)
