摘要
研制了一种泵浦Nd∶YAG棒的环形阵列准连续半导体激光器,分析了影响器件光电参数的几个主要因素,对实验结果进行了讨论。该器件采用单量子阱光电分别限制异质结结构,激光器的峰值波长为808±3nm,工作电流100A时,输出功率大于1200W(占空比为1%),光谱半宽小于4nm。
A QCW SQWSCH semiconductor laser with ring array for Nd∶YAG pumping is described. Analysis is made on some critical factors affecting the performance of the laser, followed by discussion on some experimental results. The peak wavelength of the laser is 808±3 nm, with the output power(1% duty cycle) of 1.2 kW for FWHM<4 nm at the driving current of 100 A.
出处
《半导体光电》
CAS
CSCD
北大核心
2003年第2期97-99,106,共4页
Semiconductor Optoelectronics
