摘要
采用高频磁控溅射制备了GeSb_2Te_4薄膜.系统地研究了真空热退火对GeSb_2Te_4薄膜光学性质和晶体结构的影响.对非晶态GeSb_2Te_4薄膜进行了热分析,给出了其结晶过程的动力学参数.
Phase change recording medium GeSb2Te4t hin film is prepared by RF-magnetron sputtering, Thermal annealing effects on the optical and structural properties of GeSb2Te4 thin films have been studied systematically. Thermal-inducedcrystalline property of amorphous GeSb2Te4 thin film has also been studied.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1992年第3期274-278,共5页
Acta Optica Sinica
关键词
晶体结构
晶化
非晶态薄膜
相变
GeSb2Te4, optical property, crystal structure, crystalline property.
