摘要
采用直流反应磁控溅射工艺,以纯钨靶为靶材在铟锡氧化物玻璃上制备电致变色WOx薄膜,研究了氧含量、溅射功率及溅射环境温度等工艺条件对其电致变色特性和结构的影响。实验结果表明:磁控溅射得到的WOx薄膜主要是非晶态的,在一定范围内,较低的氧含量,较高的溅射功率,较高的溅射环境温度下制备的WOx薄膜有较好的电致变色特性。
Using pure tungsten as target, WOx film was deposited on ITO glass substrate by DC reactive magnetron sputtering. The effect of oxygen content, sputtering power and sputtering-environment temperature on the electrochromic properties and structure were studied. The experimental results show that thus obtained WOx film is amorphous, and that in a certain range, the electrochromic properties can be improved when oxygen content is set lower, and sputtering power and the sputtering-environment temperature higher.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2003年第10期38-41,共4页
Electronic Components And Materials
基金
重庆市科委攻关项目(2000-6214)
关键词
氧化钨
非晶态薄膜
电致变色特性
磁控溅射
透光率
WOx
amorphous films
electrochromic properties
magnetron sputtering
transmittance
