摘要
以SiH4与H2为气源,采用射频等离子体增强化学气相沉积技术,在较高的压强(230Pa)下,研究氢稀释率对纳米晶硅薄膜的生长速率和晶化特性的影响.实验表明,薄膜的晶化率,晶粒尺寸随着氢稀释率的提高而增加,当氢稀释率为99%,薄膜的晶化率接近70%.而沉积速率却随着氢稀释率的减小而增加,当氢稀释率从99%减小到95%时,薄膜的沉积速率由0.3nm/s增加至0.8nm/s.
Nano-crystalline silicon films were prepared from SiH4 diluted with hydrogen by plasma enhanced chemical vapor deposition at a pressure of 230 Pa.The effect of hydrogen dilution on their growth rate and crystalline properties were investigated.The experimental results indicate that the crystalline fraction and grain size increase with increasing hydrogen dilution ratio,and when the hydrogen dilution ratio increases to 99%,the crystalline fraction reaches 70%.The deposition rate decreases with increasing hydrogen dilution ratio,when the hydrogen dilution ratio decreases from 99% to 95%,the deposition rate of thin film increases from 0.3nm/s to 0.8nm/s.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第1期565-569,共5页
Acta Physica Sinica
基金
韩山师范学院基金(批准号:FC200508)资助的课题~~
关键词
纳米晶硅薄膜
氢稀释
晶化率
硅烷
nano-crystalline silicon thin films,hydrogen dilution,crystalline fraction,SiH4
