摘要
研究了低能量背面Ar+轰击对n沟MOSFET低频噪声的影响 .用低能量 ( 5 5 0eV)的氩离子束轰击n沟MOSFET芯片的背面 ,能改善其饱和区和线性区的低频噪声频谱密度 .饱和区低频噪声的减小可用载流子迁移率模型解释 ,而线性区低频噪声的减小可用载流子数模型解释 ;其变化的原因可能与氩离子束背面轰击后反型层电子的有效迁移率、二氧化硅中的固定电荷密度以及硅 二氧化硅界面的界面态密度的变化有关 .
Influence of backsurface Ar+ bombardment on the low-frequency noise characteristics of n-MOSFET is investigated.A low energy (550eV) argon-ion-beam is applied to bombard the backside of n-MOSFET,thus the low-frequency noise spectral density in the linear region and the saturation region can be improved.The decrease of the low-frequency noise can be explained by the mobility fluctuations model and the carrier number fluctuations model.All these change may be caused from the alteration of the effective electron mobility in the inversion layer,the fixed charge density and the interface-state density after Ar+ backsurface bombardment.
