摘要
采用三元共蒸发法制备CuInSe_2薄膜,需要较精确的蒸发速率控制。对于电阻蒸发来讲,保持蒸发器电阻为恒定值,再通以恒定电流就可获得恒定功率,从而获得稳定的蒸发速率。本文根据这一原则,通过改进钼舟,在普通的蒸发设备上较容易地实现了蒸发速率的控制。另外,为了更好地恒定蒸发速率,需要对源温进行监测,本文对源温的测量提出了新的见解。通过对CuInSe_2膜的测量发现,在较高衬底温度下沉积的CuInSe_2膜有较强的(112)结晶取向,同时发现不同的衬底材料对生成的CuInSe_2膜有极大影响。
To Prepare CuInSe_2 thin films by three-source coevaporation technigue requires elaborate control precision of deposition rate.For resistance-heated evaporation, if the source resistance is held constant and get a constant current, a stable evaporant power and a stable deposition rate can be gotten.According to this principle, we have improved the Mo-boat and have controled the evaporant rate easily in a simple evaporation system.A new idea about measuring of source temperature witch should be measured and controled to hold evaporant rate well have been presented. The surface appearance and the structure of CIS thin films have been measured by SEM and x-ray diffraction.It found that CIS thin films prepared at higher substrate temperature had stronger chalcopyrite structure, and on diffrent substrate materials, They have diffrent characters.
出处
《功能材料》
EI
CAS
CSCD
1992年第2期88-91,116,共5页
Journal of Functional Materials
