摘要
对不同温度下退火的ＣｄＳ多晶薄膜测量了暗电导率σｄ和暗电导－温度关系，发现未退火ＣｄＳ的暗电导率为１０－５Ω－１ｃｍ－１，经退火后σｄ增加，在２００℃退火σｄ有极大值．
The dark conductivity and the dependence of dark conductivity on temperature of cadmium sulphide polycrystalline films annealing at different temperatures are measured.It shows that the dark conductivity of as deposited samples is 10 -5 Ω -1 cm -1 and increases to the maximum annealing at 200℃.The activation energy decreases after annealing.
出处
《西南民族学院学报（自然科学版）》
CAS
1999年第2期169-172,共4页
Journal of Southwest Nationalities College(Natural Science Edition)
关键词
退火
温度
电导率
砷化镓
薄膜
CdS film
annealing
temperature
conductivity
