摘要
介绍了功率VDMOSFET导通电阻的模型 ,重点讨论了栅SiO2 厚度Tox对特征导通电阻RonA的影响 ,经过大量的理论计算 ,给出了击穿电压为 2 0V时VDMOSFET的Tox与RonA的关系曲线 .
The module of power VDMOSFET is introduced. The effects of thickness T ox of gate (SiO 2) on special on state resistance are discussed in detail. After large theoretical calculations, the curve of relationship of Tox and R on A is obtained when BV ds =20 V. The relationship between optimal cell dimensions and T ox is also first pvesented.
出处
《辽宁大学学报（自然科学版）》
CAS
2003年第1期36-39,共4页
Journal of Liaoning University：Natural Sciences Edition
