摘要
本文介绍了功率 VDMOSFET导通电阻的模型 ,重点讨论了 PW与 PT对特征导通电阻 Ron A的影响 ,经过大量的理论计算 ,给出了击穿电压为 5 0 0 V时 PW/PT与 Ron A的关系曲线。首次提出 Ron A与 PW/PT有最佳比例关系。
This paper introduced the on-state resistance model of power VDMOSFET and discussed the effects of PW and PT on featured on-state resistance RonA in detail.The plot of relationship between PW/PT and RonA was obtained through a number of theoretical caculations when the BVDS was 500V.The concept that there exists a optimal ratio of cell dimensions to PW/PT was first presented.
出处
《微处理机》
2003年第5期9-11,14,共4页
Microprocessors
