摘要
本文以正方形单胞为例 ,较系统地分析了器件的物理机制、结构及其工作原理 ,并通过大量计算和分析找出多晶硅窗口区尺寸 LW和多晶硅尺寸 LP的最佳设计比例 ,阐述了器件的最佳化设计思想。通过具体给定的参数确定了外延层电阻率及外延层厚度、运用迭代法算出栅氧化物厚度 TOX、P区扩散浓度 NP。然后由最佳 LW和 LP值给出相应的特征导通电阻 Ron。进而给出有效面积和单胞数。
This paper analyzes the physical machine,device struction and working principle systematically for the square cell.Throughamount of calculation,we give the best proportion of window width (L W) and polysilicon width (L P),and give the method of optimum design.This paper works out the thickness and resistivity of the epitaxial layer under the giver parameters,gives the thickness (T ox) of the gate and the density of P diffusion part (N P) adopting the iteration method.Specifically,the specific on-resistance is conducted based on the proper value pair of L W and L P.The efficient area and the number of cell are given at last.
出处
《微处理机》
2004年第2期5-7,共3页
Microprocessors
