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PLZT薄膜的溅射沉积和热处理

DEPOSITION AND ANNEAL OF (PB,LA) (ZR,TI)O_3 THIN FILMS BY RF SPUTTERING
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摘要 用磁控射频溅射方法在不加热的硅衬底上沉积生长锆钛酸铅镧(PLZT)薄膜。由混浇法制备了两只氧化物靶材PLZT(5/65/35)和(9/65/35)。初生态薄膜主要是非晶态,所希望的钙钛矿相结构由后处理形成。研究了不同退火条件下焦绿石相和钙钛矿相的转变,实验表明氧气氛下由常规退火(LFA)和快速退火(RTA)可形成钙钛矿相PLZT薄膜。 Thin films of lead lanthanum zirconate titanate (PLZT) were deposited by rf magnetron sputtering from oxide targets onto unheated Si substrates. Both the targets, PLZT (5/65/35 ) and (9/65/35), were prepared by mixing the oxides and calcining at high temperature. The deposited PLZT films were mainly amorphous. The desired perovskite phase was formed by post annealing.The pyrochlore to perovskite phase transformation was studied as a function Of annealing conditions. It was observed that the anneal has a marked effect on diffusion processes and crystallization of PLZT films Perovskite PLZT phases were formed in O2 ambient by the post annealing process using rapid thermal annealing (RTA) or conventional furnace annealing (CFA).
机构地区 上海冶金研究所
出处 《上海工程技术大学学报》 CAS 1999年第4期243-246,共4页 Journal of Shanghai University of Engineering Science
关键词 溅射沉积 热处理 PLZT薄膜 磁控射频溅射 钙钛矿相 退火 锆钛酸铅镧陶瓷薄膜 铁电薄膜 PLZT thin films Rf magnetron sputtering Perovskite phase Annealing
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