摘要
用磁控射频溅射法制备了ＮｉＦｅ／Ｃｕ／Ｃｏ多层膜；研究了薄膜的磁特性和磁电阻特性与中间层Ｃｕ厚度的关系．在适当的Ｃｕ层厚度下（大约为２ｎｍ），制备出了具有很好自旋阀巨磁阻效应的多层膜．研究表明，在弱磁场下，薄膜的磁电阻回线的斜率与原来的磁化过程有关。
NiFe/Cu/Co multilayer films are deposited by magnetron RF sputtering system. The dependence of Cu layer thickness on the magnetic properties and giant magneto resistance properties are studied. At an appropriate thickness (about 2nm), the large spin valve giant magneto resistance effect films are obtained. In the minor magnetic field, the slope of the magneto resistance vs. Field curve depends on its past magnetization history. This film can be used in magneto resistance RAM.
出处
《华中理工大学学报》
CSCD
北大核心
1999年第1期47-49,共3页
Journal of Huazhong University of Science and Technology
基金
国家自然科学基金
关键词
多层膜
巨磁电阻效应
磁控射频溅射
薄膜
铜
钴
multilayer film
giant magneto resistance
magnetron RF sputtering system
