摘要
电解液电反射(EER)光谱技术,工艺简单,易于实现,并且具有很高的灵敏和分辨率,因此长期以来在研究半导体材料特性方面得到了广泛的应用,例如,半导体的能带结构、光学性质、合金组分等。利用电反射光谱检测化合物半导体材料掺杂浓度的空间分布均匀性也获得了令人满意的结果。但是,这种方法在测量绝对掺杂浓度上遇到了困难,因而至今尚未得到应用。
A method of calculating the doping concentration in compound semiconductor is presened based on the electrolyte electroreflectance (EER) spectrum. In the paper the quantitative relaion between broadening parameter Γ and doping concentration N is first derived and the EER spectra of GaAs are measured. The result obtained by this method is consistent with the result of C-V measurement, Therefore a simple and feasible method of measuring doping concentration is provided.
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
1992年第6期91-95,共5页
Journal of Southeast University：Natural Science Edition
关键词
电解液电反射
光谱
半导体
掺杂
semiconductor material, spectrascopy, broadening, doping concentration, EER spectra
