摘要
位形坐标图是描述固体中杂质缺陷中心上的电子与晶体耦合引起的多种物理效应的有力工具,在半导体深中心行为的统一描述中常被使用。本文给出了由实验数据建立半导体中深中心位形坐标图的简便方法,分析了位形坐标图中各有关能量值的物理意义和容易混淆之处,指出了由实测数据建立位形坐标图时应注意温度效应这一因素。
The configuration coordinate diagram (C.C.diagram) is a powerful tool in describing the physical effects induced by the coupling between electrons which is on impurities defects and lattice in solid. It is frequently used in describing the behavior of the deep centre of semiconductor. This paper proposes a convenient method for constructing C.C. diagram of a deep centre which is based on the experimental results. Analyses and distinguishes the physical meaning of the energy magnitude which are involved in the C.C. diagram and points out that the temeprature effect must be considered in constructing C. C, diagram.
出处
《东北林业大学学报》
CAS
CSCD
北大核心
1992年第5期76-81,共6页
Journal of Northeast Forestry University
关键词
半导体
深中心
位形坐标图
Semiconductor
Deep centre
Configuration coordirate diagram
