期刊文献+

一款Q值与L值可相互独立调谐且低噪声的差分有源电感

A Differential Active Inductor with Low Noise and Mutually Independent Tuning of Quality Factor and Inductance
在线阅读 下载PDF
导出
摘要 提出了一款品质因数(Q)与电感值(L)可相互独立调谐和低噪声的新型压控差分有源电感(VCDAI),主要由正跨导器、负跨导器、有源可调反馈电阻、可变电容以及负阻产生模块构成。基于TSMC 0.18μm工艺和Candence Virtuoso设计工具,对VCDAI进行了电路仿真、版图绘制和后仿真。后仿真结果表明,在5.8 GHz的高频下,Q峰值可由527调节至1822,调谐率为110%,而L值的变化率仅为3.5%;在5.1 GHz的高频下,L值可由97.7 nH调节到188.3 nH,调谐率为63%,而Q值的变化率仅为2.2%;在1 GHz和8 GHz下,有源电感的输入噪声分别为4.48 nV/√Hz和0.62 nV/√Hz。 A novel voltage controlled differential active inductor(VCDAI)with mutually independent tuning of quality factor(Q)and in-ductance(L)and low noise is proposed,which is mainly composed of a positive transconductor,a negative transconductor,an active ad-justable feedback resistance,a variable capacitance and a negative resistance generation module.Based on TSMC 0.18μm process and Cadence Virtuoso design tool,circuit simulation,layout design and post-layout simulation are conducted.The post-layout simulation re-sults show that at 5.8 GHz,the Q peak value can be adjusted from 527 to 1822 with the tuning percentage of 110%,while the variation rate of L value is only 3.5%,at high frequencies of 5.1 GHz,the L value can be adjusted from 97.7 nH to 188.3 nH with the tuning per-centage of 63%,while the variation rate of Q values is only 2.2%,and under 1 GHz and 8 GHz,the input noise of the active inductor is 4.48 nV/√Hz and 0.62 nV/√Hz,respectively.
作者 高文静 张万荣 谢红云 金冬月 那伟聪 李楠星 任衍贵 吴银烽 GAO Wenjing;ZHANG Wanrong;XIE Hongyun;JIN Dongyue;NA Weicong;LI Nanxing;REN Yangui;WU Yinfeng(College of Microelectronics,Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China)
出处 《电子器件》 2025年第4期728-734,共7页 Chinese Journal of Electron Devices
基金 国家自然科学基金项目(62271014) 北京市自然科学基金项目(4232062) 北京市教委科技计划一般项目(KM202110005029) 中国博士后科学基金资助项目(2019M650404)。
关键词 有源电感 独立调节 高Q值 低噪声 active inductor independent adjustment high Q value low noise
  • 相关文献

参考文献1

二级参考文献14

  • 1ThomasHLee.CMOS射频集成电路设计[M].2版.余治平,周润德,译.北京:电子工业出版社,2012.
  • 2Hwang K S,Cho C S, Lee J W,et al. High Quality-Factor and In- ductance of Symmetric Differential-Pair Structure Active Inductor Using a Feedback Resistance Design [ C]//2008 1EEE MTF-S ln- ternatinnal Microwave Symposium Digest,2008 : 1059-1062.
  • 3Ear A. Design and Simulation of Differential Active lnduetor with 0.18 μm CMOS Technology [ C ]//2011 IEEE International Con- ference on System Engineering and Technology. 2011:23-26.
  • 4Belmas F,Hameau F,Fournier J F. A New" Method fur Perfonuance Control of a Differential Active Inductor fbr Low Power 2.4 GHz Ap- plications[ C]//Proceedings of 2010 IEEE lnternatiomd Conference on IC Design and Technology. Grenoble,France. 2010:244-247.
  • 5Wang S, Koickal T J, Hamilton A, et al. A Floating Aclive Inductor Based CMOS Cochlea Filter with High Tunability and Sharp Cut- off[ C ]//2013 IEEE International Symposium on Circuits and Sys- tems(1SCAS) ,2013 : 193-196.
  • 6Ler C L,A'ain A K B,Kordesch A V. CMOS Active Inductor Line- arity Impruvement Using Feed-Forard Current Source Technique [ J]. IEEE Transactions on Microwave Theory. and Techniques, 2009,57(8) : 1915-1924.
  • 7Robert F,Cathelin P,Diet A,et al. A Highly Linear and Tunable Feed Forward Current Source Active Inductor in 65 nm CMOS Technology lot Mobile Applications[ C]//2011 IEEE 12th Annual Wireless and Microwave Technology Conference ( WAMICON ), 2011 : 1-6.
  • 8Razavi B. RF Microelectronics[ M ]. Beijing: Publishing House of Electronics Industry, 2012 : 62- 63.
  • 9Ler C L,bin A'ain A K,Korteseh A V. Compact,High-,and Low-Cur- rent Dissipation CMOS Differential Active Inductor[ J ]. IEEE Micro- wave and Wireless Comixmenls Ixetters,2008,18(10) :683-685.
  • 10Grozing M,Pascht A,Berroth M. A 2.5 V CMOS Differential Active Inductor with Tunable L and Q for Frequencies up to 5 GHz[ C]// Proceedings of 2001 1EEE Intenmtional Conference on Microwave Theory and Technique. Phoenix, Arizona, USA. 2001:575-578.

共引文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部