摘要
提出了一种基于新型差分有源电感(DAI)的小面积、宽调谐范围、低相位噪声的电感-电容型压控振荡器(L_(AI)C VCO)。其中DAI主要由差分正跨导器、改进型负跨导器以及反馈电阻构成,以获得电感值的大调谐范围,且同时保持较高Q值和较低的噪声值;将DAI代替VCO中的传统无源LC谐振腔,以减小芯片面积、拓展振荡频率的可调范围、降低相位噪声;同时采用RC滤波负阻产生电路,以滤除流入L_(AI)C谐振腔的噪声电流,进一步降低VCO的相位噪声。最终,VCO获得了良好的综合性能。基于TSMC 0.18μm RF CMOS工艺,利用Cadence设计工具,对该L_(AI)C VCO进行了前仿真验证、版图绘制以及后仿真性能验证。前仿真结果表明,振荡频率可在0.48~3.24 GHz之间进行调节,即调谐百分比为148.39%;在频率偏移1 MHz处的相位噪声变化范围为-75.9~-95.4 dBc/Hz,最终获得了-165 dBc/Hz的电路优值;版图后仿真结果表明,所提出的L_(AI)C VCO电路也实现了较好的性能。
A novel differential active inductor(DAI)based inductor-capacitor type voltage-controlled oscillator(L_(AI)C VCO)with small area,wide tuning range and low phase noise was proposed.The DAI was mainly composed of a differential positive transconductor,two improved negative transconductors and two feedback resistors,so as to obtain tunable inductance while maintaining high Q value and low noise characteristics.Subsequently,the DAI was employed to replace the passive LC resonator in VCO in order to not only reduce the chip area,but also extend the tuning range of oscillation frequency and reduce the phase noise.In addition,a RC filter negative resistance generation circuit in L_(AI)C VCO was utilized to filter the noise current flowing into L_(AI)C resonator and further reduce the phase noise.Based on the 0.18μm RF CMOS process of TSMC,the schematic simulation verification,layout design and post-layout simulation verification of the L_(AI)C VCO were carried out by using Cadence design tool.The schematic simulation results indicate that the oscillation frequency can be tuned from 0.48 GHz to 3.24 GHz with a large tuning range of 148.39%.At the frequency offset of 1 MHz,the phase noise range is from-75.9 dBc/Hz to-95.4 dBc/Hz.Finally,the best figure of merit of-165 dBc/Hz is achieved.The post-layout simulation results confirm that better performance can be achieved with the proposed L_(AI)C VCO circuit.
作者
王雪
张万荣
宋金达
张辉
楚尚勋
WANG Xue;ZHANG Wanrong;SONG Jinda;ZHANG Hui;CHU Shangxun(College of Information Science and Technology,Beijing University of Technology,Beijing 100124,China)
出处
《电子元件与材料》
北大核心
2025年第1期79-87,94,共10页
Electronic Components And Materials
基金
国家自然科学基金(61774012,61574010,61901010)
北京市自然科学基金(4192014,4204092)
中国博士后科学基金(2019M650404)
北京市朝阳区博士后科研经费资助项目(2019ZZ-9)。
关键词
压控振荡器
有源电感
高集成度
调谐范围
相位噪声
优值
voltage-controlled oscillator
active inductor
high integration level
tuning range
phase noise
figure of merit
