期刊文献+

紫外氟化钙晶体的生长技术

Growth Technology of Ultraviolet Calcium Fluoride Crystals
在线阅读 下载PDF
导出
摘要 氟化钙(CaF_(2))晶体具有极高的紫外光透过率(>90%@157 nm)、高的激光损伤阈值和低折射率,是实现深紫外光刻的关键材料。随着半导体行业对高精度和高分辨率光刻技术的不断追求,高品质氟化钙晶体及其生长成为人们关注的焦点。本文首先介绍了CaF_(2)晶体的结构和性能特点,以及常见的晶体缺陷,列举了其在光刻系统中的应用要求;随后,介绍了紫外CaF_(2)晶体的生长方法,包括提拉法、坩埚下降法、温度梯度法和平板法;基于现有研究进展,重点讨论了原料纯度和生长工艺在减少晶体缺陷、可定向生长高品质紫外CaF_(2)晶体方面的影响;最后对晶体生长技术的未来进行了展望。 Calcium fluoride(CaF_(2))crystals are key materials for deep ultraviolet lithography due to their extremely high UV transmittance(>90%@157 nm),high laser damage threshold,and low refractive index.With the continuous pursuit of high-precision and high-resolution lithography technology in the semiconductor industry,high-quality calcium fluoride crystals and their growth have become the focus of attention.In this paper,the structure and performance characteristics of CaF_(2)crystals,as well as common crystal defects,are introduced,and its application requirements in lithography systems are listed.Subsequently,the growth methods of ultraviolet CaF_(2)crystals were reviewed,including the lifting method,the crucible descending method,the temperature ladder method and the plate method.Based on the existing research progress,the effects of raw material purity and growth process in reducing crystal defects and enabling the directional growth of high-quality ultraviolet CaF_(2)crystals were discussed.Finally,the future of crystal growth technology is prospected.
作者 王斌 王晓莉 侯越云 刘娇 刘珊 WANG Bin;WANG Xiaoli;HOU Yueyun;LIU Jiao;LIU Shan(Beijing Industrial Technology Research Institute Co.,Ltd.,Beijing 101111,China;Beijing Glass Research Institute Co.,Ltd.,Beijing 101111,China)
出处 《人工晶体学报》 北大核心 2025年第8期1369-1378,共10页 Journal of Synthetic Crystals
基金 北京市国资委项目。
关键词 CaF_(2) 晶体生长 光刻 紫外 晶体缺陷 CaF_(2) crystal growth photoetching UV crystal defect
  • 相关文献

参考文献26

二级参考文献210

共引文献93

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部