摘要
硅基半导体技术作为半导体产业的核心支柱,其制造精度已逼近几纳米,正向原子级精准制造迈进。然而,受瑞利衍射极限制约,传统的极紫外光刻技术已难以满足未来半导体制造对更高精度的需求。作为一种原子级精准的光刻技术,氢去钝化光刻(HDL)凭借其极高的空间分辨率和可扩展性,成为了突破硅基半导体技术发展瓶颈的重要战略方向。该技术基于扫描隧道显微镜探针的原子级操控,通过精确控制硅表面氢原子脱附,实现原子级图案化加工。自20世纪90年代问世以来,该技术已经成功制造出单原子晶体管、量子逻辑门等传统光刻工艺难以实现的器件,展现出了颠覆性的技术优势。文章系统回顾了HDL技术的发展历程与关键突破,并展望其未来发展方向。未来,通过进一步提升加工效率和可靠性,HDL技术有望在半导体芯片工艺升级、纳米压印技术升级和量子器件制造等前沿领域实现广泛的应用,推动未来半导体科技的重大发展。
Silicon-based semiconductor technology,as the cornerstone of the semiconductor industry,has achieved manufacturing precision at the scale of a few nanometers and is now advancing toward atomic-level precision.However,due to the Rayleigh diffraction limit,traditional extreme ultraviolet(EUV)lithography is unable to meet the demands for atomic-scale precision required in future semiconductor manufacturing.As an atomically precise lithography technique,hydrogen depassivation lithography(HDL)has emerged as a strategic solution to address this challenge,owing to its exceptional spatial resolution and scalability.Leveraging the atom manipulation capabilities of scanning tunneling microscope(STM),HDL enables atomic-scale patterning by precisely controlling the desorption of hydrogen atoms on silicon surfaces.Since its introduction in the 1990s,HDL has successfully fabricated devices such as single-atom transistors and quantum logic gates,which are unattainable through traditional lithography processes,showcasing its transformative advantages.This article provides a comprehensive review of the development history and key breakthroughs of HDL technology,while also exploring its future prospects.By further improving processing efficiency and reliability,HDL technology is poised to enable widespread applications in various fields,including semiconductor manufacturing,nanoimprint technology,and quantum device manufacturing,thereby driving significant progress in the future of semiconductor technology.
作者
鲍洋
徐海
景鹏涛
徐辑廉
闫家旭
詹达
刘雷
申德振
BAO Yang;XU Hai;JING Pengtao;XU Jiian;YAN Jiaxu;ZHAN Da;LIU Lei;SHEN Dezhen(Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,State Key Laboratory of Luminescence Science and Technology,Changchun 130033,China)
出处
《真空科学与技术学报》
北大核心
2025年第8期651-663,共13页
Chinese Journal of Vacuum Science and Technology
基金
中国科学院海外高层次人才引进计划项目
国家自然科学基金项目(11727902,12074372,12334014,12174385)。
关键词
原子制造
硅基半导体
光刻技术
扫描隧道显微镜
Atomic manufacturing
Silicon-based semiconductors
Lithography technology
Scanning tun-neling microscopy
