摘要
为有效降低悬臂梁结构MEMS微波功率检测芯片边缘场效应的影响,改善检测芯片的微波特性,建立了MEMS微波功率检测芯片悬臂梁电容模型,对悬臂梁结构进行了优化设计,利用有限元仿真软件研究了阵列过孔尺寸和密度对边缘场电容的补偿作用。有限元仿真结果表明,过孔大小为10μm×10μm、过孔间距为10μm时结构最优,三种结构相同尺寸不同的MEMS悬臂梁耦合电容计算值分别为67.6 fF、101.4 fF、135.3 fF,有限元仿真得到的等效电容值分别为67.3fF、100.5 fF、134.1 fF,MEMS悬臂梁边缘场电容的影响分别被降低至0.4%、0.9%和0.9%。实验结果表明,检测芯片8~12 GHz下回波损耗均小于-10.6 dB,10 GHz下三个系统的灵敏度分别为16.3 fF/W、65.6 fF/W和144.4 fF/W,为研究MEMS悬臂梁电容模型提供了一定的参考价值。
To effectively reduce the influence of edge field effect on the micro-electromechanical systems(MEMS)microwave power detection chip of a cantilever-beam structure and improve the microwave characteristics of the detection chip,we established a cantilever-beam capacitance model in this study.The cantilever-beam structure was optimized,and the compensation effect of the array hole size and density on edge field capacitance was studied using finite element simulation software.The finite element simulation results showed that the structure was optimal when the hole size was 10μm×10μm and hole spacing was 10μm.The calculated coupling capacitance values of three MEMS cantilever beams were 67.6,101.4,and 135.3 fF,respectively.The equivalent capacitance values obtained using the finite element simulation were 67.3,100.5,and 134.1 fF,respectively,and the influence of the edge field capacitance of the MEMS cantilever beams decreased to 0.4%,0.9%and 0.9%,respectively.The experimental results showed that the return loss of the detection chip was less than-10.6 dB at 8–12 GHz,and the sensitivities of the three systems at 10 GHz were 16.3,65.6,and 144.4 fF/W,respectively,which provide reference values for studying the MEMS cantilever-beam capacitance model.
作者
丁治尹
陈新
孙浩宇
王德波
DING Zhiyin;CHEN Xin;SUN Haoyu;WANG Debo(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,P.R.China)
出处
《微电子学》
北大核心
2025年第4期648-654,共7页
Microelectronics
基金
国家自然科学基金资助项目(61904089)
江苏省自然科学基金资助项目(BK20190731)。
