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双通道MEMS微波功率传感器的悬臂梁设计 被引量:11

Design of Cantilever for Dual-Channel MEMS Microwave Power Sensor
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摘要 为实现热电式MEMS微波功率传感器与电容式MEMS微波功率传感器的兼容,得到一种性能优良的双通道MEMS微波功率传感器,需要对MEMS悬臂梁的匹配特性进行分析与设计。根据MEMS悬臂梁的一维集中参数模型,分析了MEMS悬臂梁的吸合电压,研究了MEMS悬臂梁的位移与电容的变化关系以及MEMS悬臂梁的谐振频率,得到了MEMS悬臂梁的匹配特性与MEMS悬臂梁高度的变化关系。实验结果表明,当MEMS悬臂梁的高度设计为10μm时,MEMS悬臂梁的谐振频率为16.13kHz,在8-12GHz频率范围内,回波损耗均小于-19dB。 In order to realize compatibility of thermoelectric MEMS microwave power sensor and capacitive MEMS microwave power sensor, and to obtain an excellent dual-channel MEMS microwave power sensor, the matching characteristics of MEMS cantilever needs to be analyzed and designed. According to the one-dimensional MEMS cantilever lumped parameter model, the pull-in voltage of MEMS cantilever was analyzed. The relationship of capacitance change with the displacement of MEMS cantilever was analyzed, and the resonant frequency of MEMS cantilever was also analyzed. The relationship of the matching characteristics of MEMS cantilever with the height of MEMS cantilever was obtained. Experimental results showed that the resonant frequency of MEMS cantilever was 16.13 kHz when the height of the cantilever was designed at 10 μm. In the ranges from 8 GHz to 12 GHz, the return loss was less than -19 dB.
出处 《微电子学》 CAS CSCD 北大核心 2015年第3期408-412,共5页 Microelectronics
基金 国家青年自然科学基金资助项目(11304158 11304159) 江苏省青年自然科学基金资助项目(BK20140870 BK20140890) 南京邮电大学引进人才资助项目(NY213024) 东南大学MEMS教育部重点实验室开放研究基金资助项目
关键词 MEMS 双通道 功率传感器 悬臂梁 匹配特性 MEMS Dual-channel Power sensor Cantilever Matching characteristic
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参考文献14

  • 1陈旻,廖波,孔德文.基于MEMS技术的微热电器件的研究进展[J].微电子学,2004,34(1):7-12. 被引量:7
  • 2章彬,黄庆安.无线通信领域MEMS器件的研究进展[J].微电子学,2001,31(3):198-203. 被引量:2
  • 3曾大富,刘建华,罗驰.MEMS传感器的真空密封技术[J].微电子学,2005,35(3):268-269. 被引量:1
  • 4DEHE A, KROZER V, FRICKE K, et al. Harmagel intrgrated microwave power sensor [J']. Elec Lett, 1995, 31(25): 2187-2188.
  • 5DEHE A, KROZER V, CHEN B, et al. High- sensitivity microwave power sensor [or GaAs-MMIC Implementation [J]. Elec Lett, 1996, 32(23): 2149- 2150.
  • 6MILANOVIC V, GAITAN M, ZAGHLOUL M E. Micromachined thermocouple microwave detector in CMOS technology [C] // IEEE 39th Midwest symp Circ ~y- Syst. Ames, IA, USA. 1996, 1: 273-276.
  • 7MILANOVIC V, GAITAN M, ZAGHLOUL M E. Micromachined thermoeouple microwave detector by commercial CMOS fabrication [ J ]. IEEE Trans Microwave Theo Tech, 1998, 46(5) : 550-553.
  • 8MILANOVIC V, GAITAN M, BOWEN E D, et al. Thermoelectric power sensor for microwave applications by commercial CMOS fabrication [J]. IEEE Elec Dev Lett 1997, 18(9): 450-452.
  • 9KODATO S, WAKABAYASHI T, ZHUANG Q D, et al. New structure for DC-60GHz thermal power sensor [C] // IEEE MTT-S Microwave Symp Dig. San Francisco, CA, USA. 1996, 2: 871-874.
  • 10KODATO S, WAKABAYASHI T, ZHUANG Q D, et al. New structure for DC-65 GI-Iz thermal power sensor [C] // Int Conf Sol Sta Sensors ~y- Actuators. Chicago, IL, USA. 1997, 2: 1279-1282.

二级参考文献16

  • 1Kim S H,IEEE Electon Device Lett,1999年,20卷,3期,113页
  • 2Yao Z J,IEEE J Microelectromech Syst,1999年,8卷,2期,129页
  • 3Wang K,Microelectromech Syst,1999年,8卷,4期,534页
  • 4Hiltmann K,Sensors Actuators,1999年,74卷,203页
  • 5Lin L W,Microelectromech Syst,1998年,7卷,3期,286页
  • 6Nguyen C T C,1997 IEEE International Symposium on Circuits and Systems,1997年,2825页
  • 7Clark J R,1997 Int Conf Solid-State Sensors and Actuators,1997年,1161页
  • 8Papapolymerou J,IEEE Microwave Guided Wave Lett,1997年,7卷,6期,168页
  • 9Zhu L,IEEE Trans Microwave Theory Tech,1997年,45卷,5期,650页
  • 10Chi C Y,IEEE Trans Microwave Theory Tech,1996年,44卷,4期,629页

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