摘要
基于180 nm BCD工艺,设计了一种具有基极电流补偿的低噪声LDO电路,采用BJT预放大级,降低了误差放大器的1/f噪声;采用单位增益负反馈架构,消除了反馈电阻网络贡献的噪声,并通过一阶RC低通滤波器降低了基准的高频噪声;同时,提出一种基极电流补偿电路,用于补偿BJT预放大级的基极电流,避免基准电压的降低。仿真结果表明:该LDO输入电压2.4~5.5 V,输出电压0.8~5.3 V,最大带载电流500 mA,在1 kHz处的输出噪声谱密度为4 nV/√Hz,10~100 kHz积分噪声为0.92μVRMS。
A low-noise low-dropout(LDO)circuit with base current compensation is designed in a 180-nm bipolar–CMOS–DMOS(BCD)process.A bipolar junction transistor(BJT)pre-amplifier stage is used in the LDO to reduce the 1/f noise of the error amplifier.A unity-gain negative feedback architecture is utilized to eliminate the noise generated by the feedback resistor network,and a first-order RC low-pass filter is used to attenuate the high-frequency noise of the reference.Additionally,a base current compensation circuit is proposed to compensate for the base current of the BJT pre-amplifier stage,thereby preventing the decrease in the reference voltage.Simulation result shows that the LDO has an input voltage of 2.4–5.5 V,output voltage of 0.8–5.3 V,and maximum load current of 500 mA.The output noise spectral density at 1 kHz is 4 nV/√Hz,and the integrated noise from 10 Hz to 100 kHz is 0.92μVRMS.
作者
黄经纬
罗萍
王浩
辛相文
李鹏
罗凯
HUANG Jingwei;LUO Ping;WANG Hao;XIN Xiangwen;LI Peng;LUO Kai(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China;Chongqing Institute Microelectronics Industry Technology University of Electronic Science and Technology of China,Chongqing,400060,P.R.China;The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing,400060,P.R.China)
出处
《微电子学》
北大核心
2025年第4期563-569,共7页
Microelectronics
基金
重庆市自然科学基金资助项目(YG2404-1)。
