摘要
本文介绍了一种用于负压LDO芯片的过温保护电路。该电路利用负压带隙基准电压的零温漂特性与三极管基极-发射极电压差的负温漂特性来产生过温控制信号。同时将该过温保护电路集成到一款负压LDO芯片中。负压LDO芯片基于4μm双极工艺流片,测试结果表明:LDO芯片的过温保护点在(165~170)℃,过温恢复点在(95~100)℃,与设计值基本吻合。
This paper presents an over-temperature protection circuit for negative-voltage monolithic low-dropout regulator(LDO).This circuit generates an over-temperature control signal through the use of negative bandgap reference voltage with zero-temperature coefficient and triode′s base-emitter voltage with negative-temperature coefficient,and has been integrated into a negative-voltage monolithic LDO chip which has been implemented in a 4μm bipolar process.The testing results show that the overtemperature protection point is around(165~170)℃and the over-temperature recovery point is around(95~100)℃,which are basically consistent with the design values.
作者
苟超
刘一锴
保兴润
赵镱翔
GOU Chao;LIU Yi-kai;BAO Xing-run;ZHAO Yi-xiang(Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.,Chongqing 400060)
出处
《环境技术》
2023年第5期108-112,共5页
Environmental Technology
基金
重庆市自然科学基金,项目编号:CSTC2021JCYJ-MSXMX1197。
关键词
负压LDO芯片
过温保护电路
双极工艺
over-temperature protection circuit
negative-voltage monolithic LDO
bipolar process
