摘要
在5G通信时代,体声波(BAW)滤波器件成为实现高性能射频(RF)滤波的有效解决方案。在当前BAW器件发展最成熟的薄膜体声波谐振器(FBAR)技术和专利被少数几家公司持有的大环境下,对压电薄膜生长、器件的制备工艺等方面进行突破,形成独有的BAW器件技术路线显得尤为重要。本文综述了AlN薄膜的生长、AlN材料在BAW滤波器件的发展、基于AlN的BAW器件的制备及其应用。在国内研究者的努力下,基于单晶AlN的体声波谐振器(SABAR)器件,通过在材料生长方法及制备工艺上的独立自主创新,不仅使BAW滤波器件的性能得到了进一步提升,也给受到国外掣肘的国内射频滤波行业带来了一条摆脱国外“卡脖子”问题的新路线。
In the era of 5G communication,bulk acoustic wave(BAW)filters have become an effective solution to achieve high-performance radio frequency(RF)filtering.In the current environment where film bulk acoustic resonator(FBAR)technology(the most mature BAW technology)and patents are held by a few companies,it is essential to make breakthroughs in piezoelectric film growth and device preparation,to form a unique BAW device technology route.This paper reviews the AlN thin film growth,the development of AlN in BAW filter devices,and the preparation and application of AlN-based BAW devices.With the efforts of domestic researchers,the single-crystalline AlN bulk acoustic resonator(SABAR)device has further improved the performance of BAW devices through independent innovation in the material growth method and preparation process.Moreover,it also brought a new route to eliminate the“neck sticking”problem to the RF filter industry constrained by foreign countries.
作者
欧阳佩东
衣新燕
罗添友
王文樑
李国强
OUYANG Peidong;YI Xinyan;LUO Tianyou;WANG Wenliang;LI Guoqiang(School of Materials Science and Engineering,South China University of Technology,Guangzhou 510641,China;Guangzhou Aifo Light Communication Technology Co.,Ltd.,Guangzhou 510700,China)
出处
《人工晶体学报》
CAS
北大核心
2022年第9期1691-1702,共12页
Journal of Synthetic Crystals
基金
广东省重点领域研发计划(2019B010129001)。
关键词
ALN薄膜
体声波滤波器
材料生长
设备制造
单晶AlN的体声波谐振器
AlN thin film
bulk acoustic filter
material growth
device manufacturing
single-crystalline AlN bulk acoustic resonator
