摘要
采用直流磁控反应溅射方法 ,在Si(111)基片上成功地沉积了表面粗糙度小、组成均匀、以 (10 0 )面和 (0 0 2 )面择优取向的AlN薄膜 ,研究了溅射气压、溅射功率和靶基距对AlN薄膜结构及晶面取向的影响。结果表明 ,溅射气压低 ,靶基距短 ,有利于以 (0 0 2 )面择优取向 ;相反 ,溅射气压高 ,靶基距长 ,则对 (10 0 )面择优取向有利 ;溅射功率过高或过低均不利于晶面择优取向。并从Al—N化学键的形成以及溅射粒子平均自由程的角度探讨了AlN压电薄膜晶面择优取向。
AlN thin films with preferential orientations (100) and (002) have been deposited on Si(111) substrates by DC mag netron reactive sputtering.The influence of sputtering pressure,sputtering power and target substrate distance on the preferential orientation of AlN thin films has been studied.The results show that AlN(100) easily forms at high sputtering pressure and long target substrate distance;where as low sputtering pressure and short target substrate distance are favorible to AlN(002) formation. The preferential orientation of AlN thin films from the formation of Al—N chemical bond and the mean free path of sputtering particles were also discussed.
出处
《真空科学与技术》
EI
CAS
CSCD
北大核心
2000年第6期442-446,共5页
Vacuum Science and Technology
基金
国家自然科学基金! (批准号 :2 97410 0 4)
山西省自然科学基金! (批准号 :9910 5 6 )
教育部骨干教师资助计划联合资助
关键词
氮化铝薄膜
择优取向
平均自由程
压电薄膜
AlN thin films,Preferential orientation,Chemical bond,Mean free path
