摘要
介绍了一种 ECR微波放电和脉冲激光沉积相结合低温沉积 Al N薄膜的新方法 .在 ECR氮等离子体环境中用脉冲激光烧蚀 Al靶 ,以低于 80℃的衬底温度在 Si衬底上沉积了 Al N薄膜 .结合样品表征和等离子体光谱分析 ,探讨了膜层沉积的机理 ,等离子体中活性氮物质的存在是 Al- N化合的重要因素 。
A new method for low\|temperature deposition of AlN films by combining ECR microwave discharge with pulsed laser deposition is presented. By means of pul sed laser ablation of Al target in ECR nitrogen plasma, AlN films were deposited on Si substrates in temperatures below 80℃. Together with the sample charact erization and plasma emission analysis, the mechanism of the film growth was dis cusse d. The existence of activated nitrogen species is responsible for the Al\|N syn thesis. The irradiation of the substrates with plasma accelerates the film formation.
基金
国家自然科学基金!(批准号 :698780 0 4 )
上海市科学技术发展基金!(批准号 :98JC1 4 0 1 1 )&&
关键词
氮化铝
低温沉积
薄膜
AlN
Low\|temperature deposition
films
