摘要
由温度过高引起的IGBT器件失效率高达55%,提高散热器的散热效率是保证IGBT器件安全可靠运行的基础。通过对IGBT模块水冷散热进行理论分析,提出基于流场-温度场耦合的温升计算方法,并利用仿真软件对IGBT模块进行流场-温度场耦合计算,之后搭建温升试验平台,用小电流饱和压降法测量芯片温度,与仿真结果进行对比,误差在5%以内,最后对散热器结构进行优化设计。分析结果得出IGBT模块产生的热量从上往下、从中间向四周扩散传播,最高结温小于工作的极限温度,且优化后的散热器散热效果提升明显。基于耦合场数值计算的方法对大功率IGBT模块温升及散热进行分析,能得到流体流动情况和温度分布情况,再通过温升试验对比分析,可为散热器结构的优化设计提供依据。
The failure rate of IGBT devices caused by excessively high temperature is as high as 55%.Improving the heat dissipation efficiency of the heat sink is the basis for ensuring the safe and reliable operation of IGBT devices.Through theoretical analysis of IGBT module water cooling and heat dissipation,a temperature rise calculation method based on flow field-temperature field coupling was proposed,and simulation software was used to perform flow field-temperature field coupling calculation for IGBT module.After that,a temperature rise test platform was built,and the chip temperature was measured by the method of small current saturation voltage drop.Compared with the simulation results,the error is less than 5%.Finally,the radiator structure was optimized.The analysis results show that the heat generated by the IGBT module diffuses from top to bottom and from the middle to the surroundings.The maximum temperature is less than the operating limit temperature,and the heat dissipation effect of the optimized heat sink is significantly improved.The temperature rise and heat dissipation of high-power IGBT module were analyzed based on the coupled field numerical calculation method,and the fluid flow and temperature distribution were obtained.Then,the comparative analysis of temperature rise test provided a basis for the optimal design of radiator structure.
作者
高凤良
黄雄峰
范虹兴
张炫焜
GAO Fengliang;HUANG Xiongfeng;FAN Hongxing;ZHANG Xuankun(College of Electrical Engineering and Renewable Energy,China Three Gorges University,Yichang 443002,Hubei,China;School of Electrical Engineering and Automation,Hefei University of Technology,Hefei 230009,Anhui,China;Jinhua Electric Power Supply Company of State Grid,Jinhua 321017,Zhejiang,China;Party School(Training Center),Chongqing Electric Power Company of State Grid,Chongqing 400053,China)
出处
《电气传动》
2022年第9期32-38,共7页
Electric Drive
基金
国家自然科学基金(52077048)。
关键词
绝缘栅双极型晶体管
水冷散热
数值计算
温度场
流场
insulated gate bipolar transistor(IGBT)
water cooling
numerical calculation
temperature field
flow field
