摘要
推出一种适用于复杂电路仿真分析的绝缘栅双极性晶体管(insulated gate bipolar transistor,IGBT)模型。模型分阶段模拟IGBT的开关瞬态过程,并采用曲线拟合的方式实现对IGBT稳态特性的建模。模型具有计算速度快、参数提取容易、物理概念明确的特点。描述模型的等效原理、构成和参数提取过程,并在PSIM软件包下建立其等效电路。以FF300R12ME3型IGBT为例给出了模型参数,并将模型应用于IGBT的开关特性分析、缓冲吸收电路设计以及IGBT的并联运行分析。仿真和实验结果对比证明了该模型的有效性。
A new insulated gate bipolar transistor （IGBT） model for simulation of complicated circuits was presented. It piecewise modeled the turn-on and -off transient of IGBT, and simulated the static characteristics by curve fitting method. High simulation speed, easy parameters determination and clear physical meaning are its key features. The equivalent circuit, structure, and parameter extraction of the model were described, and it was realized with the simulation tool of PSIM package. The parameters of the model were provided for an IGBT of FF3OOR12ME3 as an example. The model was used in analysis of switching characteristics, snubber circuit, and paralleled operation of the IGBT. The accuracy of the model was verified by the comparison between the simulated and experimental results.
出处
《中国电机工程学报》
EI
CSCD
北大核心
2010年第9期1-7,共7页
Proceedings of the CSEE
基金
国家自然科学基金项目(50737002
50707015)~~
关键词
绝缘栅双极性晶体管
模型
PSIM
开关特性
缓冲吸收电路
并联运行
insulated model
PSIM
switching paralleled operation gate bipolar transistor （IGBT）
characteristic
snubber circuit
