期刊文献+

高压大容量静止同步补偿器功率开关器件选用分析 被引量:16

Power Device Characterization and Selection of High Voltage and High Power STATCOM
在线阅读 下载PDF
导出
摘要 在电力电子装置中,大功率开关器件很大程度上决定设备的技术经济指标。以南方电网35kV/±200Mvar链式静止同步补偿器(STATCOM)工程应用为背景,介绍了电子注入增强门极晶体管(IEGT)的基本结构、工作原理和性能特性分析,并与绝缘栅双极性晶体管(IGBT)与集成门极换向晶闸管(IGCT)的参数进行对比,阐述了基于IEGT的功率相模块结构及工作原理,并对其进行了试验验证。试验结果表明IEGT具有优越性,可作为高压大容量STATCOM功率开关器件的首选。所得结论经南方电网STATCOM实际工程应用验证,可供高压大容量STATCOM设计借鉴。 The technical and economic indicators of power electronic devices are mostly determined by switching devices of large power.Based on engineering applications of Southern Power Grid(SPG)35kV/±200Mvar cascaded STATCOM,the basic structure and the operation principle of injection enhanced gate transistor(IEGT)is briefly treated,and the performance characteristics are analyzed and compared with the parameters of integrated gate commutated thyristor(IGCT)and insulated gate bipolar transistor(IGBT).The phase-module of IEGT and the operation principle are dealt with,and the superior characteristics of phase-module are verified by experimental results.The research shows that IEGT should be the first choice of power switching devices of the high-voltage and large power STATCOM.The conclusions obtained have proved useful in actual project application of China SPG,providing a reference for high-voltage and large power STATCOM design.
出处 《电力系统自动化》 EI CSCD 北大核心 2013年第2期113-118,共6页 Automation of Electric Power Systems
  • 相关文献

参考文献15

  • 1陶礼学,姚钢,周荔丹,陈陈.基于IGBT的±10kvar STATCOM装置设计[J].电力自动化设备,2006,26(5):61-65. 被引量:12
  • 2邓夷,赵争鸣,袁立强,胡斯登,王雪松.适用于复杂电路分析的IGBT模型[J].中国电机工程学报,2010,30(9):1-7. 被引量:48
  • 3刘文华,刘炳.IEGT——适用于STATCOM的新型大功率开关器件[J].电力电子技术,2001,35(4):45-47. 被引量:7
  • 4刘文华,胡雨辰,刘炳,王仲鸿.IGCT和IEGT——适用于STATCOM的新型大功率开关器件[J].电力系统自动化,2000,24(23):66-70. 被引量:24
  • 5OGURA T, SUG1YAMA K, NINOMIYA H, et al. High turn-off current capability of parallel-connected 4.5 kV trench IEGT [ J ]. IEEE Trans on Electron Devices, 2003, 50(5) :1392-1397.
  • 6YAMAGUCHI M, OMURA I, URANO S, et al. IEGT design criterion for reducing EMI noise[C]// Proceedings of the IEEE 16th International Symposium on Power Semiconductor Devices ICs (ISPSD' 04), May 24-27, 2004, Kitakyushu, Japan:115-118.
  • 7FURUYA M, ISHIYAMA Y. Current measurement inside press pack IGBTs[J]. Fuji Electric Journal, 2002, 75(8): 1-4.
  • 8RAHIMO M, KOPTA A, LINDER S. Novel enhanced-planar IGBT technology rated up to 6.5 kV for lower losses and higher SOA capability [ C ]// Proceedings of the IEEE 18th International Symposium on Power Semiconductor Devices and IC's (ISPSD'06), June 4-8, 2006, Naples, Italy: 4p.
  • 9OMURA I, DAMN T, MIYAKE E, et al. Electrical and mechanical package design for 4.5 kV ultra high power IEGT with 6 kA turn off capability[C]// Proceedings of the IEEE 15th International Symposium on Power Semiconductor Devices and ICs (ISPSD'03), April 14-17, 2003, Cambridge, UK: 114-117.
  • 10FUKUMA K, HOSODA H, SUZUKI K, et al. Application of large capacity voltage source inverter to cylindrical rotor synchronous motor [ C ]// Proceedings of the IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE & ECCE'11), May 30 June 3, 2011, Jeju, Republic of Korea: 427-434.

二级参考文献32

  • 1赵良炳,马维新,陈建业.现代电力电子学及其在电力系统中的应用(九)第四讲提高电力电子装置的可靠性[J].电网技术,1995,19(8):66-69. 被引量:4
  • 2孟进,马伟明,张磊,赵治华.基于IGBT开关暂态过程建模的功率变流器电磁干扰频谱估计[J].中国电机工程学报,2005,25(20):16-20. 被引量:54
  • 3刘文华,陈建业,王仲鸿,王新超,李承业,刘毓,王旬,李向荣.采用GTO的新型静止无功发生器[J].电力系统自动化,1997,21(3):24-28. 被引量:25
  • 4Hefner A R, Blackburn D L. An analytical model for the steady-state and transient characteristics of the power insulate gate bipolar transistor[J]. Solid-State Electronics, 1988, 31(10): 1513-1532.
  • 5Hefner A R. An improved understanding for the transient operation of the power insulate gate bipolar transistor (IGBT)[J]. IEEE Trans. on Power Electronics, 1990, 6(4): 459-468.
  • 6Hefner A R. Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)[J]. IEEE Trans. on Industry Applications, 1990, 26(6): 995-1005.
  • 7Hefner A R, Diebolt D M. An experimentally verified IGBT model implemented in the saber circuit simulator[J]. IEEE Trans. on Power Electronics, 1994, 9(5): 532-542.
  • 8Sheng K, Finney S J, Williams B W. A new analytical IGBT model with improved electrical characteristics[J]. IEEE Trans. on Power Electronics, 1999, 14(1): 98-107.
  • 9Kraus R, Mattausch H J. Status and trends of power semiconductor device models for circuit simulation[J]. IEEE Trans. on Power Electronics, 1998, 13(3): 452-465.
  • 10Sheng K, Williams B W, Finney S J. A review of IGBT models[J]. IEEE Trans. on Power Electronics, 2000, 15(6): 1250-1266.

共引文献84

同被引文献162

引证文献16

二级引证文献70

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部