期刊文献+

氧化物基紫外探测器的研究进展 被引量:4

Progress in Oxide-based Ultraviolet Detectors
在线阅读 下载PDF
导出
摘要 随着紫外探测技术的不断发展,氧化物材料在紫外探测领域表现出传统探测器所不具备的优点而成为近年研究的热点,是继红外探测技术之后又一快速发展的军民两用探测技术。然而,氧化物基紫外光电探测器的广泛应用,仍然面临一些问题。本文对国内外紫外探测技术的应用和发展历史进行了概述,并对3种金属氧化物紫外探测材料的晶体结构、性质及其器件研究进展进行了概括和讨论。最后,针对氧化物基紫外探测材料及器件在研究中所面临的问题,进行了分析,并对氧化物基紫外探测技术的发展进行了总结与展望。 With the development of ultraviolet detection technology,oxide materials showing the unique advantages in the field of ultraviolet detection,which the traditional detectors didn’t possess,and becoming a hot research topic in recent years.It is a fast-developing dual-purpose detection technology after the infrared detection technology.However,the wide applications of oxide-based ultraviolet detectors still face challenges.In this paper,we have summarized the applications and development histories of the ultraviolet detection technology at home and abroad.The crystal structures,properties and progresses in devices of three kinds of metal oxide ultraviolet materials are summarized and discussed.In the end,the problems in the research of the oxide-based ultraviolet detection materials and devices are analyzed,and the development of the oxide-based ultraviolet detection technology is summarized and prospected.
作者 贾梦涵 唐利斌 左文彬 王方 姬荣斌 项金钟 JIA Menghan;TANG Libin;ZUO Wenbin;WANG Fang;JI Rongbin;XIANG Jinzhong(School of Physics and Astronomy,Yunnan University,Kunming 650500,China;Kunming Institute of Physics,Kunming 650223,China;Yunnan State Key Laboratory of Advanced Photoelectric Materials and Devices,Kunming 650223,China)
出处 《红外技术》 CSCD 北大核心 2020年第12期1121-1133,共13页 Infrared Technology
基金 国家重点研发计划(2019YFB2203404) 云南省创新团队项目(2018HC020) 自然科学基金项目(11864044)。
关键词 光电探测 氧化物基材料 紫外探测器 photoelectric detection oxide-based materials ultraviolet detectors
  • 相关文献

参考文献7

二级参考文献49

  • 1贺北平,王占生,张锡辉.半导体光催化氧化有机物的研究现状及发展趋势[J].环境科学,1994,15(3):80-83. 被引量:84
  • 2邱健斌 曹亚安 等.担载材料对TiO2薄膜光催化活性的影响[J].物理化学学报,2000,16(1):1-4.
  • 3[1]Razeghi M, Rogalski A. Semiconductor ultraviolet detectors[J]. J. Appl. Phys., 1996,79: 7 433-7 473.
  • 4[2]Irrera F, De Cesare G, Iorio V, et al. Amorphous silicon UV photodetectors with rejection of the visible spectrum[J]. J. Non-Crystalline Solids., 1996, 198-200: 1 198-1 201.
  • 5[3]Nowak Z, Piotrowski J, Dobrzanski L. Micromachined silicon bolometers as detectors of soft X-ray, ultraviolet, visible and infrared radiation[J].Sensors and Actuators A: Physical 1997, 60: 154-159.
  • 6[4]Hiscock J, Collins A T. Comparison of diamond and silicon ultraviolet photodetectors[J]. Diamond and Related Materials. 1999, 8: 1 753-1 758.
  • 7[5]Ferguson I, Tran C A, Karlicek Jr R F, et al. GaN and AlGaN metal semiconductor metal photodetectors[J]. Materials Science and Engineering: B, 1997,50: 311-314.
  • 8[6]Kazuo S, Takayuki O, Norihiko S, et al. Surface characterization of titanium dioxide powder treated by the CH4-H2 plasma CVD method[J]. Surface and Coatings Technology, 2003, 174-175: 882-885.
  • 9[7]Phonthammachai N, Chairassameewong T, Gulari E, et al. Structural and rheological aspect of mesoporous nanocrystalline TiO2 synthesized via sol gel process[J]. Microporous and Mesoporous Materials, 2003, 66 : 261-271.
  • 10[8]Kim Seon-Hwa, Choi Yong-Lak, Seung Yo, et al. Influence of sputtering parameters on microstructure and morphology of TiO2 thin films[J]. Materials Letters, 2002, 57: 343-348.

共引文献156

同被引文献27

引证文献4

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部