摘要
Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide（ITO） thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. The detector shows a good photoresponse with a rise time of 2 s and a fall time of 40 s, the photocurrent is linearly increased with the bias voltage.
Crystalline_( )TiO_(2) thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO_(2) thin films was based on a sandwich structure of C/ TiO_(2)/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO_(2) thin films was analyzed at different bias voltage. The detector shows a good photoresponse with a rise time of 2 s and a fall time of 40 s, the photocurrent is linearly increased with the bias voltage.
