摘要
用双离子束溅射淀积法,在轰击源含不同 CH_4流量比的条件下,于玻璃和 Si 基片上淀积了DLC 薄膜。用多种手段对所制备的膜进行了结构表征和性能分析。结果表明,轰击源中 CH_4流量比对DLC 膜的结构、形貌及其光、电性能有重要的影响。分析了影响机制,探讨了 DLC 膜的生长机理。
Using dual-ion beam sputtering deposition method,DLC films were depositedon glass and silicon substrate under different CH_4 flow ratios(CH_4/(CH_4+Ar)from 0% to100%)in bombarding ion source.The structures and the properties of the films were systemati-cally analyzed.It showed that the structures,the morphological characteristics and the proper-ties of the films were strongly influenced by the CH_4 flow ratios.The formation mechanism ofDLC films were investigated.
关键词
离子束
溅射
淀积
DLC膜
薄膜
Dual-ion beam sputtering deposition
DLC films
thin film growth
structure
properties
